Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory | DealShopping Deutschland
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Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory

59.00 EUR

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