GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements | DealShopping Deutschland
  1. Home
  2. Medien
  3. Bücher
  4. GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements
  • #

GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements

48.00 EUR

Teilen:

Ähnliche Produkte

Gasphasenepitaxie und Eigenschaften von nicht

Gasphasenepitaxie und Eigenschaften von nicht- und semipolaren GaN

31.05 EUR
Hybrid-Gasphasen-Epitaxie zur Herstellung von GaN-Substraten geringer Krümmung

Hybrid-Gasphasen-Epitaxie zur Herstellung von GaN-Substraten geringer Krümmung

31.30 EUR
GaN-Based HEMTs for High Voltage Operation: Design Technology and Characterization

GaN-Based HEMTs for High Voltage Operation: Design Technology and Characterization

41.10 EUR
GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers

GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers

79.00 EUR
DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS

DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS

59.00 EUR