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  1. Home
  2. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

85.59 EUR

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

SpringerLink DE
85.59 EUR
26-04-2026 16:39:43

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