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Nitrogen incorporation into high-k gate dielectrics

68.00 EUR

Ein Fachbuch beleuchtet die Integration von Stickstoff in HfO₂‑ und HfSiO‑Gate‑Dielektriken, analysiert deren Einfluss auf MOSFETs und zeigt Wege zur Leistungssteigerung bei reduzierter Leckage.

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Nitrogen incorporation into high-k gate dielectrics, Fachbücher

Galaxus.de
68.00 EUR
21-06-2026 03:31:24

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